Application of Metal Oxide Memristor Models in Logic Gates

Memristors, as new electronic elements, have been under rigorous study in recent years, owing to their good memory and switching properties, low power consumption, nano-dimensions a compatibility present integrated circuits, related promising applications circuits chips. The main purpose of this paper is the application analysis operations metal–oxide memristors logic gates complex schemes, using several standard modified memristor models comparison between behavior LTSPICE at hard-switching, paying attention fast operation properties. Several basic gates—OR, AND, NOR, NAND, XOR, based on CMOS transistors are considered. schemes applicable with artificial intelligence. They analyzed for pulse signals hard-switching functioning memristors. analyses confirm proper, properties considered logical compared models. classical models, according some significant criteria such operating frequency, simulation time, accuracy, complexity Based gates, more scheme analyzed.